Role of ions in SiO2 deposition with pulsed and continuous helicon plasmas*
نویسنده
چکیده
Good-quality silicon dioxide films have been deposited at low temperature (≤200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural properties of the deposited oxide, we have found that silicon-containing ions contribute to the film growth (up to 50 %) and appear to be responsible for the measured compressive stress.
منابع مشابه
SiO2 deposition from oxygen/silane pulsed helicon diffusion plasmas
Near-stoichiometric SiO2 films, with little H incorporation and wet etch rates 1.5–3 times that of thermal oxide, have been deposited in a low pressure oxygen/silane helicon diffusion plasma, which has been pulsed with a 50% duty cycle at frequencies from 0.005 Hz to 1 kHz. At low pulse frequencies, the deposition rate is about 50% of the continuous rate, but as the pulse frequency increases fr...
متن کاملElectron heating and density production in microwave-assisted helicon plasmas
Microwaves are injected into argon and helium helicon plasmas at 6 to 20 mTorr neutral pressure, 1.2 kW pulsed microwave power, up to 500 W continuous RF power, and up to 1 kG magnetic fields, with the objective of heating the tail of the electron energy distribution function (EEDF) and populating ion metastable states. Langmuir probes are used to measure the EEDF and optical emission spectrosc...
متن کاملBias and Self-Bias of Magnetic Macroparticle Filters for Cathodic Arc Plasmas
Curved magnetic filters are often used for the removal of macroparticles from cathodic arc plasmas. This study addresses the need to further reduce losses and improving plasma throughput. The central figure of merit is the system coefficient, κ , defined as filtered ion current normalized by the plasma-producing arc current. The coefficient κ is investigated as a function of continuous and puls...
متن کاملMD-Simulation of Duty Cycle and TaN Interlayer Effects on the Surface Properties of Ta Coatings Deposited by Pulsed-DC Plasma Assisted Chemical Vapor Deposition
In this work, molecular dynamics (MD) simulations were employed to investigate the effects of duty cycle changes and utilization of tantalum nitride interlayer on the surface roughness and adhesion of Ta coating deposited by pulsed-DC plasma assisted chemical vapor deposition. To examine the simulation results, some selected deposition conditions were experimentally implemented and characterize...
متن کاملLuminescent Si Nanocrystals Synthesized by Si Ion Implantation and Reactive Pulsed Laser Deposition: The Effects of RTA, Excimer-UV and E-Beam Irradiation
Si ion implantation was widely used to synthesize specimens of SiO2 containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si...
متن کامل